Datasheet > PMEG3010EP115

PMEG3010EP115

更新时间： 2024-11-06 11:48:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	91K
描述
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package.

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PMEG3010EP115 数据手册

PMEG3010EP

1 A low V_FMEGA Schottky barrier rectiﬁer

Rev. 01 — 30 December 2008

Product data sheet

1. Product proﬁle

1.1 General description

Planar Maximum Efﬁciency General Application (MEGA) Schottky barrier rectiﬁer with an

integrated guard ring for stress protection, encapsulated in a SOD128 small and ﬂat lead

Surface-Mounted Device (SMD) plastic package.

1.2 Features

I Average forward current: I_F(AV)≤ 1 A

I Reverse voltage: V_R≤ 30 V

I Low forward voltage

I High power capability due to clip-bond technology

I AEC-Q101 qualiﬁed

I Small and ﬂat lead SMD plastic package

1.3 Applications

I Low voltage rectiﬁcation

I High efﬁciency DC-to-DC conversion

I Switch Mode Power Supply (SMPS)

I Reverse polarity protection

I Low power consumption applications

1.4 Quick reference data

Table 1.

Quick reference data

T_j= 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward current

square wave;

δ = 0.5;

f = 20 kHz

[1]

_amb≤ 130 °C

_sp≤ 145 °C

V_R

V_F

I_R

reverse voltage

forward voltage

reverse current

360

1.5

I_F= 1 A

320

0.6

V_R= 30 V

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.

12 3 4 5 6 7...13

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