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PMEG3010EGW-Q PDF预览

PMEG3010EGW-Q

更新时间: 2024-09-16 11:12:51
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
10页 216K
描述
30 V, 1 A low VF Schottky barrier rectifierProduction

PMEG3010EGW-Q 数据手册

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PMEG3010EGW-Q  
30 V, 1 A low VF Schottky barrier rectifier  
26 September 2022  
Product data sheet  
1. General description  
Planar Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in a  
small SOD123 Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
Forward current: IF ≤ 1 A  
Reverse voltage: VR ≤ 30 V  
Low forward voltage typ. VF = 450 mV  
Low reverse current typ. IR = 40 µA  
Small SMD plastic package  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Low voltage rectification  
High efficiency DC-to-DC conversion  
Switch mode power supply  
Reverse polarity protection  
Low power consumption applications  
Automotive applications  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Tsp ≤ 55 °C  
Tj = 25 °C  
Min  
Typ  
Max  
1
Unit  
A
IF  
forward current  
reverse voltage  
forward voltage  
-
-
-
-
VR  
VF  
-
30  
V
IF = 1 A; tp ≤ 300 µs; δ = 0.02;  
Tj = 25 °C  
450  
560  
mV  
IR  
reverse current  
VR = 30 V; pulsed; Tj = 25 °C  
[1]  
-
40  
150  
µA  
[1] Very short test pulse to prevent junction self-heating.  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
cathode[1]  
anode  
Simplified outline  
Graphic symbol  
K
A
K
A
1
2
2
sym001  
SOD123  
[1] The marking bar indicates the cathode.  
 
 
 
 
 
 

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