Datasheet > PMEG3010EB-Q

PMEG3010EB-Q

更新时间： 2024-11-10 11:12:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	176K
描述
30 V, 1 A very low VF Schottky barrier rectifierProduction

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PMEG3010EB-Q 数据手册

PMEG3010EB-Q

30 V, 1 A very low VF Schottky barrier rectifier

23 May 2023

Product data sheet

1. General description

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in

a SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Forward current: I_F≤ 1 A

•

Reverse voltage: V_R≤ 30 V

Very low forward voltage

Ultra small and flat lead SMD plastic package

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low voltage rectification

High efficiency DC-to-DC conversion

Switch mode power supply

Reverse polarity protection

Low power consumption applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F

forward current

reverse voltage

forward voltage

T_sp≤ 55 °C

V_R

V_F

I_F= 1 A; pulsed; t_p≤ 300 µs; δ ≤ 0.02;

T_amb= 25 °C

610

680

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode[1]

anode

Simplified outline

Graphic symbol

sym001

SC-79 (SOD523)

[1] The marking bar indicates the cathode.

12 3 4 5 6 7 8

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