是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT-23 | 包装说明: | PLASTIC PACKAGE-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.23 | 最大集电极电流 (IC): | 0.3 A |
基于收集器的最大容量: | 6 pF | 集电极-发射极最大电压: | 150 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.35 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
KST5401MTF | FAIRCHILD |
功能相似 |
High Voltage Transistor | |
BC239C | ONSEMI |
功能相似 |
Amplifier Transistors(NPN Silicon) | |
BC237 | ONSEMI |
功能相似 |
Amplifier Transistors(NPN Silicon) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBT5401/T3 | NXP |
获取价格 |
TRANSISTOR 300 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, B | |
PMBT5401-T | NXP |
获取价格 |
TRANSISTOR 300 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, B | |
PMBT5401T/R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 500MA I(C) | SOT-23 | |
PMBT5401-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 500 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
PMBT5401-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 500 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
PMBT5401TRL | NXP |
获取价格 |
暂无描述 | |
PMBT5401TRL13 | NXP |
获取价格 |
TRANSISTOR 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
PMBT5401TRL13 | YAGEO |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon | |
PMBT5550 | NXP |
获取价格 |
NPN high-voltage transistor | |
PMBT5550 | NEXPERIA |
获取价格 |
NPN high-voltage transistorProduction |