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BC237

更新时间: 2024-11-05 22:27:23
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页数 文件大小 规格书
4页 87K
描述
Amplifier Transistors(NPN Silicon)

BC237 数据手册

 浏览型号BC237的Datasheet PDF文件第2页浏览型号BC237的Datasheet PDF文件第3页浏览型号BC237的Datasheet PDF文件第4页 
Order this document  
by BC237/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
1
MAXIMUM RATINGS  
2
3
BC BC BC  
237 238 239  
Rating  
Symbol  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
CollectorEmitter Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
V
CEO  
45  
50  
25  
30  
25  
30  
V
Vdc  
CES  
EBO  
V
6.0  
5.0  
100  
5.0  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = 2.0 mA, I = 0)  
BC237  
BC238  
BC239  
V
45  
25  
25  
V
V
(BR)CEO  
C
B
EmitterBase Breakdown Voltage  
(I = 100 A, I = 0)  
BC237  
BC238  
BC239  
V
6.0  
5.0  
5.0  
(BR)EBO  
E
C
Collector Cutoff Current  
I
CES  
(V  
CE  
= 30 V, V  
= 0)  
BC238  
BC239  
0.2  
0.2  
15  
15  
nA  
BE  
(V  
(V  
= 50 V, V  
= 30 V, V  
= 0)  
BC237  
0.2  
15  
CE  
BE  
BE  
= 0) T = 125°C  
BC238  
BC239  
0.2  
0.2  
4.0  
4.0  
µA  
CE  
A
(V  
CE  
= 50 V, V  
= 0) T = 125°C  
BC237  
0.2  
4.0  
BE  
A
REV 1  
Motorola, Inc. 1996  

BC237 替代型号

型号 品牌 替代类型 描述 数据表
ZTX651STZ DIODES

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