BC237A

更新时间： 2024-01-30 10:39:36

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页数	文件大小	规格书
4页	87K
描述
Amplifier Transistors(NPN Silicon)

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技术参数
数据手册

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BC237A 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.66
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin/Lead (Sn/Pb)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BC237A 数据手册

Order this document

by BC237/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

BC BC BC

237 238 239

Rating

Symbol

Unit

Vdc

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

Collector–Emitter Voltage

Emitter–Base Voltage

CEO

Vdc

CES

EBO

6.0

5.0

100

5.0

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

357

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = 2.0 mA, I = 0)

BC237

BC238

BC239

—

(BR)CEO

Emitter–Base Breakdown Voltage

(I = 100 A, I = 0)

BC237

BC238

BC239

6.0

5.0

—

(BR)EBO

Collector Cutoff Current

CES

= 30 V, V

= 0)

BC238

BC239

—

0.2

= 50 V, V

= 30 V, V

= 0)

BC237

—

0.2

= 0) T = 125°C

BC238

BC239

—

0.2

4.0

µA

= 50 V, V

= 0) T = 125°C

BC237

—

0.2

4.0

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4

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