是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.17 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.3 A |
基于收集器的最大容量: | 6 pF | 集电极-发射极最大电压: | 140 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.35 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
VCEsat-Max: | 0.25 V | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PMBT5551 | NXP |
类似代替 |
NPN high-voltage transistor | |
MMBT5551-7-F | DIODES |
功能相似 |
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
MMBT5551 | FAIRCHILD |
功能相似 |
NPN General Purpose Amplifier |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBT5550,215 | NXP |
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PMBT5550 - NPN high-voltage transistor TO-236 3-Pin | |
PMBT5550/T1 | ETC |
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TRANSISTOR HIGH VOLTAGE | |
PMBT5550/T3 | NXP |
获取价格 |
TRANSISTOR 300 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, B | |
PMBT5550-Q | NEXPERIA |
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NPN high-voltage transistorProduction | |
PMBT5550-T | NXP |
获取价格 |
TRANSISTOR 300 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, B | |
PMBT5550T/R | NXP |
获取价格 |
TRANSISTOR 300 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, B | |
PMBT5550-TAPE-13 | NXP |
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TRANSISTOR 600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
PMBT5550-TAPE-7 | NXP |
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TRANSISTOR 600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
PMBT5550TRL | NXP |
获取价格 |
TRANSISTOR 600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
PMBT5550TRL13 | NXP |
获取价格 |
暂无描述 |