Datasheet > PMBT5551-Q

PMBT5551-Q

更新时间： 2024-09-17 11:14:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
8页	181K
描述
NPN high-voltage transistorProduction

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中文翻译

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PMBT5551-Q 数据手册

PMBT5551-Q

NPN high-voltage transistor

21 July 2022

Product data sheet

1. General description

NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

2. Features and benefits

•

Low current (max. 300 mA)

•

High voltage (max. 160 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General purpose

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

160

I_C

collector current

300

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

emitter

collector

sym123

SOT23

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PMBT5551-Q

SOT23

plastic, surface-mounted package; 3 terminals; 1.9 mm

pitch; 2.9 mm x 1.3 mm x 1 mm body

SOT23

12 3 4 5 6 7 8

中文翻译

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