Datasheet > PMBT6429-Q

PMBT6429-Q

更新时间： 2024-09-17 17:01:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	178K
描述
45 V, 100 mA NPN general purpose transistorProduction

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中文翻译

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PMBT6429-Q 数据手册

PMBT6429-Q

45 V, 100 mA NPN general purpose transistor

26 July 2023

Product data sheet

1. General description

NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Low current (max. 100 mA)

•

Low voltage (max. 45 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General purpose switching and amplification

Telephony and professional communication equipment

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

DC current gain

100

h_FE

V_CE= 5 V; I_C= 0.1 mA; T_amb= 25 °C

500

1250

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

emitter

collector

sym123

SOT23

12 3 4 5 6 7

中文翻译

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