Datasheet > PMBTA06-Q

PMBTA06-Q

更新时间： 2024-11-19 11:11:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	221K
描述
NPN general purpose transistorProduction

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中文翻译

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PMBTA06-Q 数据手册

PMBTA06-Q

NPN general purpose transistor

5 July 2021

Product data sheet

1. General description

NPN general-purpose transistor encapsulated in a small SOT23 Surface-Mounted Device (SMD)

plastic package.

PNP complement: PMBTA56-Q

2. Features and benefits

•

High current (max. 500 mA)

•

Low voltage (max. 80 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General purpose switching and amplification in e.g. telephony and professional communication

equipment.

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

I_C

collector current

DC current gain

500

h_FE

V_CE= 1 V; I_C= 10 mA; T_amb= 25 °C

100

12 3 4 5 6 7...11

中文翻译

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