是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.21 | 最大集电极电流 (IC): | 0.3 A |
集电极-发射极最大电压: | 30 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 20000 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 125 MHz |
VCEsat-Max: | 1.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBTA20 | YAGEO |
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Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon | |
PMBTA20-T | NXP |
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TRANSISTOR 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SOT-23, 3 PIN, BIP General Purp | |
PMBTA20TRL | NXP |
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TRANSISTOR 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
PMBTA20TRL13 | YAGEO |
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Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon | |
PMBTA42 | NXP |
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NPN high-voltage transistor | |
PMBTA42 | NEXPERIA |
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300 V, 100 mA NPN high-voltage transistorProduction | |
PMBTA42,185 | NXP |
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PMBTA42 - 300 V, 100 mA NPN high-voltage transistor TO-236 3-Pin | |
PMBTA42,215 | NXP |
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PMBTA42 - 300 V, 100 mA NPN high-voltage transistor TO-236 3-Pin | |
PMBTA42,235 | NXP |
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PMBTA42 - 300 V, 100 mA NPN high-voltage transistor TO-236 3-Pin | |
PMBTA42/DG | NXP |
获取价格 |
300 V, 100 mA NPN high-voltage transistor |