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PMBTA13T/R PDF预览

PMBTA13T/R

更新时间: 2024-11-18 21:10:27
品牌 Logo 应用领域
恩智浦 - NXP 放大器光电二极管晶体管
页数 文件大小 规格书
7页 56K
描述
TRANSISTOR 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

PMBTA13T/R 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:SOT-23包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:unknown
HTS代码:8541.21.00.95风险等级:5.19
Is Samacsys:N最大集电极电流 (IC):0.5 A
配置:DARLINGTON最小直流电流增益 (hFE):10000
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
VCEsat-Max:1.5 VBase Number Matches:1

PMBTA13T/R 数据手册

 浏览型号PMBTA13T/R的Datasheet PDF文件第2页浏览型号PMBTA13T/R的Datasheet PDF文件第3页浏览型号PMBTA13T/R的Datasheet PDF文件第4页浏览型号PMBTA13T/R的Datasheet PDF文件第5页浏览型号PMBTA13T/R的Datasheet PDF文件第6页浏览型号PMBTA13T/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PMBTA13; PMBTA14  
NPN Darlington transistors  
Product data sheet  
2004 Jan 22  
Supersedes data of 1999 Apr 29  

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TRANSISTOR 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP Gene
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TRANSISTOR 300 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal