是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT-23 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.14 | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 3 pF | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 50 MHz | VCEsat-Max: | 0.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBTA42DS | NXP |
获取价格 |
NPN/NPN high-voltage double transistors | |
PMBTA42DS | NEXPERIA |
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NPN/NPN high-voltage double transistorsProduction | |
PMBTA42DS-Q | NEXPERIA |
获取价格 |
300 V, 100 mA NPN/NPN high-voltage double transistorProduction | |
PMBTA42-Q | NEXPERIA |
获取价格 |
300 V, 100 mA NPN high-voltage transistorProduction | |
PMBTA42-T | NXP |
获取价格 |
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SMD, SOT23, | |
PMBTA42T/R | ETC |
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TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SOT-23 | |
PMBTA42-TAPE-13 | NXP |
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TRANSISTOR 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
PMBTA42-TAPE-7 | NXP |
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TRANSISTOR 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
PMBTA43 | ETC |
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NPN high-voltage transistors | |
PMBTA43T/R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 500MA I(C) | SOT-23 |