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PMBTA42/T4 PDF预览

PMBTA42/T4

更新时间: 2024-11-14 21:17:59
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管晶体管
页数 文件大小 规格书
9页 199K
描述
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SMD, SOT23, 3 PIN, BIP General Purpose Small Signal

PMBTA42/T4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.14最大集电极电流 (IC):0.1 A
基于收集器的最大容量:3 pF集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzVCEsat-Max:0.5 V
Base Number Matches:1

PMBTA42/T4 数据手册

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PMBTA42  
300 V, 100 mA NPN high-voltage transistor  
Rev. 05 — 12 December 2008  
Product data sheet  
1. Product profile  
1.1 General description  
NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted  
Device (SMD) plastic package.  
PNP complement: PMBTA92.  
1.2 Features  
„ High voltage (max. 300 V)  
1.3 Applications  
„ Telephony and professional communication equipment  
1.4 Quick reference data  
Table 1.  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
collector-emitter voltage  
collector current  
open base  
-
-
-
-
300  
100  
V
mA  
hFE  
DC current gain  
VCE = 10 V  
IC = 1 mA  
IC = 10 mA  
IC = 30 mA  
25  
40  
40  
-
-
-
-
-
-
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
base  
Simplified outline  
Graphic symbol  
3
3
2
emitter  
3
collector  
1
1
2
2
sym021  

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