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PMBTA13TRL13 PDF预览

PMBTA13TRL13

更新时间: 2024-11-18 14:44:15
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管晶体管
页数 文件大小 规格书
1页 68K
描述
TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

PMBTA13TRL13 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.17Is Samacsys:N
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:20 V
配置:DARLINGTON最小直流电流增益 (hFE):10000
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzVCEsat-Max:1.5 V
Base Number Matches:1

PMBTA13TRL13 数据手册

  

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