Datasheet > PMBTA42-Q

PMBTA42-Q

更新时间： 2024-03-03 10:10:50

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	177K
描述
300 V, 100 mA NPN high-voltage transistorProduction

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PMBTA42-Q 数据手册

PMBTA42-Q

300 V, 100 mA NPN high-voltage transistor

3 July 2023

Product data sheet

1. General description

NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

High voltage (max. 300 V)

•

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Telephony and professional communication equipment

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

300

I_C

collector current

DC current gain

100

h_FE

V_CE= 10 V; I_C= 1 mA; T_amb= 25 °C

V_CE= 10 V; I_C= 10 mA; T_amb= 25 °C

V_CE= 10 V; I_C= 30 mA; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

emitter

collector

sym021

SOT23

12 3 4 5 6 7

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