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PMBTA13TRL13 PDF预览

PMBTA13TRL13

更新时间: 2024-11-18 14:38:23
品牌 Logo 应用领域
国巨 - YAGEO 光电二极管晶体管
页数 文件大小 规格书
3页 91K
描述
Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

PMBTA13TRL13 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.17Is Samacsys:N
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:20 V
配置:DARLINGTON最小直流电流增益 (hFE):10000
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):125 MHzVCEsat-Max:1.5 V
Base Number Matches:1

PMBTA13TRL13 数据手册

 浏览型号PMBTA13TRL13的Datasheet PDF文件第2页浏览型号PMBTA13TRL13的Datasheet PDF文件第3页 

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