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PMBTA06T/R PDF预览

PMBTA06T/R

更新时间: 2024-11-09 20:03:11
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
6页 52K
描述
TRANSISTOR 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

PMBTA06T/R 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.15Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.25 VBase Number Matches:1

PMBTA06T/R 数据手册

 浏览型号PMBTA06T/R的Datasheet PDF文件第2页浏览型号PMBTA06T/R的Datasheet PDF文件第3页浏览型号PMBTA06T/R的Datasheet PDF文件第4页浏览型号PMBTA06T/R的Datasheet PDF文件第5页浏览型号PMBTA06T/R的Datasheet PDF文件第6页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PMBTA06  
NPN general purpose transistor  
Product data sheet  
2004 Jan 22  
Supersedes data of 1999 Apr 29  

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