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PMBT5550 PDF预览

PMBT5550

更新时间: 2024-11-06 11:12:27
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管晶体管
页数 文件大小 规格书
8页 180K
描述
NPN high-voltage transistorProduction

PMBT5550 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
Is Samacsys:N最大集电极电流 (IC):0.3 A
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

PMBT5550 数据手册

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PMBT5550  
NPN high-voltage transistor  
31 August 2020  
Product data sheet  
1. General description  
NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic  
package.  
2. Features and benefits  
Low current (max. 300 mA)  
High voltage (max. 140 V)  
AEC-Q101 qualified  
3. Applications  
General purpose  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
140  
V
IC  
collector current  
-
-
300  
mA  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
base  
Simplified outline  
Graphic symbol  
3
B
E
C
C
2
emitter  
B
3
collector  
E
sym123  
1
2
SOT23  
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
PMBT5550  
SOT23  
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23  
mm x 1.3 mm x 1 mm body  
 
 
 
 
 
 

PMBT5550 替代型号

型号 品牌 替代类型 描述 数据表
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