是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.65 |
Is Samacsys: | N | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 60 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 250 | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 220 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PBSS4160DS,115 | NXP |
获取价格 |
PBSS4160DS - 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor TSOP 6-Pin | |
PBSS4160DS/T1 | NXP |
获取价格 |
TRANSISTOR 1000 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, TSO | |
PBSS4160DS/T2 | NXP |
获取价格 |
TRANSISTOR 1000 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, TSO | |
PBSS4160DS-Q | NEXPERIA |
获取价格 |
60 V, 1 A NPN/NPN low VCEsat transistorProduction | |
PBSS4160PAN | NXP |
获取价格 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | |
PBSS4160PAN | NEXPERIA |
获取价格 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistorProduction | |
PBSS4160PAN_15 | NXP |
获取价格 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | |
PBSS4160PANP | NXP |
获取价格 |
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor | |
PBSS4160PANP | NEXPERIA |
获取价格 |
60 V, 1 A NPN/PNP low VCEsat (BISS) transistorProduction | |
PBSS4160PANP-Q | NEXPERIA |
获取价格 |
60 V, 1 A NPN/PNP low VCEsat transistorProduction |