Datasheet > NTR4171PT1G

NTR4171PT1G

更新时间： 2024-12-01 17:14:59

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	439K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-2.2 A;Vgs(th)(V):±12;漏源导通电阻:75mΩ@-10V

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NTR4171PT1G 数据手册

NTR4171

UMW

P−CHANNEL MOSFET

Features

•

VDS (V) = -30V

SOT–23

RDS(ON)

75m

110m

(VGS

= -10V)

(VGS = -4.5V)

Applications

• Load Switch

• Optimized for Battery and Load Management Applications in

Portable Equipment like Cell Phones, PDA’s, Media Players, etc.

1. GATE

2. SOURCE

3. DRAIN

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

−30

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

T = 25°C

−2.2

−1.5

−3.5

0.48

Steady

State

T = 85°C

t ≤ 5 s

Steady

t ≤ 5 s

T = 25°C

Power Dissipation

(Note 1)

T = 25°C

1.25

Pulsed Drain Current

t = 10 ms

−15.0

Operating Junction and Storage Temperature

T ,

stg

−55 to

150

°C

Source Current (Body Diode)

−1.0

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device

functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

260

100

Unit

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t ≤ 10 s (Note 1)

°C/W

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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