Datasheet > NTR4502PT1G

NTR4502PT1G

更新时间： 2024-11-18 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	1609K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-3A;Vgs(th)(V):±20;漏源导通电阻:85mΩ@-10V

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NTR4502PT1G 数据手册

UMW

NTR4502

P-Channel 30-V(D-S) MOSFET

SOT–23

I_D

V_(BR)DSS

R_DS(on)MAX

\85mΩ@

-10 V

-4.5V

-3.

-30V

145mΩ

1. GATE

General Description

2. SOURCE

3. DRAIN

The UMW NTR4502PT1G uses advanced trench technology

DRAIN to provide excellent

R_DS(on)with low gate charge. This device is suitable for

use as a load

switch or in PWM applications.

Equivalent Circuit

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Units

Drain-Source voltage

Gate-Source Voltage

V_DS

V_GS

I_D

-30

±20

Continuous Drain Current

Drain Current-Pulsed

-3.0

I_DM

P_D

-24

Power Dissipation

300

℃/W

℃

Thermal Resistance from Junction to Ambient

Junction Temperature

R_θJA

T_J

417

150

Storage Temperature

T_STG

-55~ +150

℃

www.umw-ic.com

友台半导体有限公司

12 3 4 5 6 7...9

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