Datasheet > NTR4503NT1G

NTR4503NT1G

更新时间： 2024-09-28 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	349K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:2.5 A;Vgs(th)(V):±20;漏源导通电阻:110mΩ@10V;漏源导通电阻:140mΩ@4.5V

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NTR4503NT1G 数据手册

UMW

NTR4503

N-Channel 30 V (D-S) MOSFET

MOSFET PRODUCT SUMMARY

TYP

I MAX

(BR)DSS

DS(on)

SOT–23

85 mW @ 10 V

30 V

2.5 A

105 mW @ 4.5 V

1. GATE

Features

2. SOURCE

3. DRAIN

• Leading Planar Technology for Low Gate Charge / Fast Switching

• 4.5 V Rated for Low Voltage Gate Drive

• These Devices are Pb−Free and are RoHS Compliant

N−Channel

Applications

• DC−DC Conversion

• Load/Power Switch for Portables

• Load/Power Switch for Computing

MAXIMUM RATINGS

(T = 25

℃

unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25°C

2.0

1.5

State

T = 85°C

t ≤ 10 s T = 25°C

2.5

Power Dissipation

(Note 1)

Steady T = 25°C

0.73

State

Continuous Drain

Current (Note 2)

Steady T = 25°C

1.5

1.1

State

T = 85°C

Power Dissipation

(Note 2)

T = 25°C

0.42

Pulsed Drain Current

t = 10 ms

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

stg

Source Current (Body Diode)

2.0

4.0

Peak Source Current

(Diode Forward)

t = 10 ms

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device

functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

170

100

300

Unit

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t < 10 s (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. Surface−mounted on FR4 board using 1 in sq pad size.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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与NTR4503NT1G相关器件

型号	品牌	获取价格	描述	数据表
NTR4503NT3G	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
NTR4503NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4518NT1G	ONSEMI	获取价格	TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
NTR4D1202CTRF	NICHICON	获取价格	Fixed Resistor, Thin Film, 0.0625W, 12000ohm, 25V, 0.5% +/-Tol, 25ppm/Cel, Surface Mount,
NTR4D1202DTRF	NICHICON	获取价格	Fixed Resistor, Thin Film, 0.0625W, 12000ohm, 25V, 0.5% +/-Tol, 50ppm/Cel, Surface Mount,
NTR4D2402CTRF	NICHICON	获取价格	Fixed Resistor, Thin Film, 0.0625W, 24000ohm, 25V, 0.5% +/-Tol, 25ppm/Cel, Surface Mount,
NTR4D2402DTRF	NICHICON	获取价格	Fixed Resistor, Thin Film, 0.0625W, 24000ohm, 25V, 0.5% +/-Tol, 50ppm/Cel, Surface Mount,
NTR4F1601DTRF	NICHICON	获取价格	Fixed Resistor, Thin Film, 0.0625W, 1600ohm, 25V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 040
NTR4F2150DTRF	NICHICON	获取价格	Fixed Resistor, Thin Film, 0.0625W, 215ohm, 25V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 0402
NTR4F2151DTRF	NICHICON	获取价格	Fixed Resistor, Thin Film, 0.0625W, 2150ohm, 25V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 040

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