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NTR4503NT3G

更新时间： 2024-01-12 21:47:09
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 195K
描述
Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available

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中文翻译

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NTR4503NT3G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOT-23
包装说明：CASE 318-09, 3 PIN针数：3
Reach Compliance Code：unknown风险等级：5.18
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：1.5 A最大漏源导通电阻：0.11 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：25 pF
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：NOT SPECIFIED
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
认证状态：COMMERCIAL表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTR4503NT3G 数据手册

 浏览型号NTR4503NT3G的Datasheet PDF文件第2页 
Product specification  
NTR4503N  
Power MOSFET  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
30 V, 2.5 A, Single N−Channel, SOT−23  
85 mW @ 10 V  
30 V  
2.5 A  
Features  
105 mW @ 4.5 V  
• Leading Planar Technology for Low Gate Charge / Fast Switching  
• 4.5 V Rated for Low Voltage Gate Drive  
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)  
• Pb−Free Package is Available  
N−Channel  
D
Applications  
• DC−DC Conversion  
• Load/Power Switch for Portables  
• Load/Power Switch for Computing  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
S
Parameter  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
V
DSS  
30  
±20  
2.0  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Gate−to−Source Voltage  
V
GS  
V
3
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
I
D
A
A
3
State  
Drain  
T = 85°C  
A
1.5  
1
t ≤ 10 s T = 25°C  
2.5  
A
2
TR3  
Power Dissipation  
(Note 1)  
Steady T = 25°C  
State  
P
0.73  
W
A
A
D
SOT−23  
CASE 318  
STYLE 21  
Continuous Drain  
Current (Note 2)  
Steady T = 25°C  
I
D
1.5  
1.1  
A
1
Gate  
2
State  
Source  
T = 85°C  
A
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
D
0.42  
W
TR3 = Specific Device Code  
= Date Code  
M
Pulsed Drain Current  
t = 10 ms  
I
6.0  
A
V
p
DM  
ORDERING INFORMATION  
ESD Capability (Note 3)  
C = 100 pF,  
ESD  
125  
RS = 1500 W  
†
Device  
Package  
Shipping  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
NTR4503NT1  
SOT−23  
3000/Tape & Reel  
T
stg  
Source Current (Body Diode)  
I
2.0  
A
S
SOT−23  
(Pb−Free)  
NTR4503NT1G  
3000/Tape & Reel  
10000/Tape & Reel  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
SOT−23  
(Pb−Free)  
NTR4503NT3G  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
170  
100  
300  
Unit  
Junction−to−Ambient − Steady State (Note 1)  
Junction−to−Ambient − t < 10 s (Note 1)  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
q
q
JA  
JA  
JA  
R
R
1. Surface−mounted on FR4 board using 1 in sq pad size.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
3. ESD Rating Information: HBM Class 0.  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
 
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