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NTR4503NT3G

更新时间： 2024-02-14 14:29:45
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 59K
描述
Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23

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中文翻译

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NTR4503NT3G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOT-23
包装说明：CASE 318-09, 3 PIN针数：3
Reach Compliance Code：unknown风险等级：5.18
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：1.5 A最大漏源导通电阻：0.11 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：25 pF
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：NOT SPECIFIED
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
认证状态：COMMERCIAL表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTR4503NT3G 数据手册

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NTR4503N  
Power MOSFET  
30 V, 2.5 A, Single N−Channel, SOT−23  
Features  
• Leading Planar Technology for Low Gate Charge / Fast Switching  
• 4.5 V Rated for Low Voltage Gate Drive  
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)  
• Pb−Free Package is Available  
http://onsemi.com  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
85 mW @ 10 V  
• DC−DC Conversion  
• Load/Power Switch for Portables  
• Load/Power Switch for Computing  
30 V  
2.5 A  
105 mW @ 4.5 V  
N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
D
V
30  
±20  
2.0  
DSS  
Gate−to−Source Voltage  
V
V
GS  
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
State  
I
D
A
A
G
T = 85°C  
A
1.5  
t ≤ 10 s T = 25°C  
2.5  
A
S
Power Dissipation  
(Note 1)  
Steady T = 25°C  
State  
P
0.73  
W
A
A
D
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Continuous Drain  
Current (Note 2)  
Steady T = 25°C  
I
D
1.5  
1.1  
A
State  
T = 85°C  
A
3
3
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
D
0.42  
W
Drain  
1
Pulsed Drain Current  
t = 10 ms  
I
6.0  
A
V
2
p
DM  
TR3  
ESD Capability (Note 3)  
C = 100 pF,  
RS = 1500 W  
ESD  
125  
SOT−23  
CASE 318  
STYLE 21  
1
Gate  
2
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
Source  
T
stg  
Source Current (Body Diode)  
I
2.0  
A
TR3 = Specific Device Code  
= Date Code  
S
M
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†
Device  
Package  
Shipping  
NTR4503NT1  
SOT−23  
3000/Tape & Reel  
THERMAL RESISTANCE RATINGS  
SOT−23  
(Pb−Free)  
NTR4503NT1G  
3000/Tape & Reel  
10000/Tape & Reel  
Parameter  
Symbol  
Max  
170  
100  
300  
Unit  
Junction−to−Ambient − Steady State (Note 1)  
Junction−to−Ambient − t < 10 s (Note 1)  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
q
q
JA  
JA  
JA  
SOT−23  
(Pb−Free)  
NTR4503NT3G  
R
R
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. Surface−mounted on FR4 board using 1 in sq pad size.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
3. ESD Rating Information: HBM Class 0.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
March, 2005 − Rev. 3  
NTR4503N/D  
 
123456

中文翻译

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NTR4503NT3G 替代型号

型号 品牌 替代类型 描述 数据表
NTR4503NT1 ONSEMI

完全替代

 Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4503NT1G ONSEMI

类似代替

 Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23

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