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NTR4503NT1

更新时间： 2024-02-22 08:18:52
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 59K
描述
Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23

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NTR4503NT1 数据手册

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NTR4503N  
Power MOSFET  
30 V, 2.5 A, Single N−Channel, SOT−23  
Features  
• Leading Planar Technology for Low Gate Charge / Fast Switching  
• 4.5 V Rated for Low Voltage Gate Drive  
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)  
• Pb−Free Package is Available  
http://onsemi.com  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
85 mW @ 10 V  
• DC−DC Conversion  
• Load/Power Switch for Portables  
• Load/Power Switch for Computing  
30 V  
2.5 A  
105 mW @ 4.5 V  
N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
D
V
30  
±20  
2.0  
DSS  
Gate−to−Source Voltage  
V
V
GS  
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
State  
I
D
A
A
G
T = 85°C  
A
1.5  
t ≤ 10 s T = 25°C  
2.5  
A
S
Power Dissipation  
(Note 1)  
Steady T = 25°C  
State  
P
0.73  
W
A
A
D
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Continuous Drain  
Current (Note 2)  
Steady T = 25°C  
I
D
1.5  
1.1  
A
State  
T = 85°C  
A
3
3
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
D
0.42  
W
Drain  
1
Pulsed Drain Current  
t = 10 ms  
I
6.0  
A
V
2
p
DM  
TR3  
ESD Capability (Note 3)  
C = 100 pF,  
RS = 1500 W  
ESD  
125  
SOT−23  
CASE 318  
STYLE 21  
1
Gate  
2
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
Source  
T
stg  
Source Current (Body Diode)  
I
2.0  
A
TR3 = Specific Device Code  
= Date Code  
S
M
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
ORDERING INFORMATION  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†
Device  
Package  
Shipping  
NTR4503NT1  
SOT−23  
3000/Tape & Reel  
THERMAL RESISTANCE RATINGS  
SOT−23  
(Pb−Free)  
NTR4503NT1G  
3000/Tape & Reel  
10000/Tape & Reel  
Parameter  
Symbol  
Max  
170  
100  
300  
Unit  
Junction−to−Ambient − Steady State (Note 1)  
Junction−to−Ambient − t < 10 s (Note 1)  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
q
q
JA  
JA  
JA  
SOT−23  
(Pb−Free)  
NTR4503NT3G  
R
R
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. Surface−mounted on FR4 board using 1 in sq pad size.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
3. ESD Rating Information: HBM Class 0.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
March, 2005 − Rev. 3  
NTR4503N/D  
 
123456

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NTR4503NT1 替代型号

型号 品牌 替代类型 描述 数据表
NTR4503NT3G ONSEMI

完全替代

 Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4503NT1G ONSEMI

类似代替

 Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23

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