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NTR4518NT1G PDF预览

NTR4518NT1G

更新时间： 2024-01-09 05:16:48
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 68K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

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中文翻译

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NTR4518NT1G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
风险等级：5.84JESD-609代码：e3
湿度敏感等级：1端子面层：Tin (Sn)
Base Number Matches：1

NTR4518NT1G 数据手册

 浏览型号NTR4518NT1G的Datasheet PDF文件第2页浏览型号NTR4518NT1G的Datasheet PDF文件第3页浏览型号NTR4518NT1G的Datasheet PDF文件第4页浏览型号NTR4518NT1G的Datasheet PDF文件第5页浏览型号NTR4518NT1G的Datasheet PDF文件第6页 
NTR4518N  
Power MOSFET  
30 V, 2.5 A, Single N−Channel, SOT−23  
Features  
• Leading Planar Technology for Low Gate Charge / Fast Switching  
• 4.5 V Rated for Low Voltage Gate Drive  
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)  
• This is a Pb−Free Device  
http://onsemi.com  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
85 mW @ 10 V  
• DC−DC Conversion  
• Load/Power Switch for Portables  
• Load/Power Switch for Computing  
30 V  
2.5 A  
105 mW @ 4.5 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
N−Channel  
Parameter  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
D
V
DSS  
30  
20  
Gate−to−Source Voltage  
V
GS  
V
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
I
2.0  
1.5  
2.5  
0.73  
A
A
D
State  
G
T = 85°C  
A
t ≤ 10 s T = 25°C  
A
S
Power Dissipation  
(Note 1)  
Steady T = 25°C  
P
W
A
A
D
State  
Continuous Drain  
Current (Note 2)  
Steady T = 25°C  
I
D
1.5  
1.1  
A
MARKING DIAGRAM/  
PIN ASSIGNMENT  
3
State  
T = 85°C  
A
Drain  
3
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
D
0.42  
W
1
2
TR3 M G  
Pulsed Drain Current  
t = 10 ms  
I
6.0  
A
V
p
DM  
SOT−23  
CASE 318  
STYLE 21  
G
ESD Capability (Note 3)  
C = 100 pF,  
RS = 1500 W  
ESD  
125  
2
1
Gate  
Source  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
T
stg  
TR3  
M
= Device Code  
= Date Code*  
Source Current (Body Diode)  
I
S
2.0  
A
G
= Pb−Free Package  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
L
260  
°C  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
This document contains information on a product under development.  
ON Semiconductor reserves the right to change or discontinue this  
product without notice.  
†
Device  
NTR4518NT1G  
Package  
Shipping  
SOT−23  
3000/Tape & Reel  
This document, and the information contained herein, is CONFIDENTIAL AND  
PROPRIETARY and the property of Semiconductor Components Industries,  
LLC., dba ON Semiconductor. It shall not be used, published, disclosed or  
disseminated outside of the Company, in whole or in part, without the written  
permission of ON Semiconductor. Reverse engineering of any or all of the  
information contained herein is strictly prohibited.  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
E 2006, SCILLC. All Rights Reserved.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
November, 2006 − Rev. 0  
NTR4518N/D  
123456

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NTR4D2402CTRF NICHICON

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 		Fixed Resistor, Thin Film, 0.0625W, 2150ohm, 25V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 040
NTR4F2152DTRF NICHICON

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NTR4F6800DTRF NICHICON

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 		Fixed Resistor, Thin Film, 0.0625W, 680ohm, 25V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 0402
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