Datasheet > NTR4503N

NTR4503N

更新时间： 2024-11-17 12:30:59

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	195K
描述
Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available

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NTR4503N 数据手册

Product specification

NTR4503N

Power MOSFET

TYP

I MAX

(BR)DSS

DS(on)

30 V, 2.5 A, Single N−Channel, SOT−23

85 mW @ 10 V

30 V

2.5 A

Features

105 mW @ 4.5 V

• Leading Planar Technology for Low Gate Charge / Fast Switching

• 4.5 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)

• Pb−Free Package is Available

N−Channel

Applications

• DC−DC Conversion

• Load/Power Switch for Portables

• Load/Power Switch for Computing

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

DSS

±20

2.0

MARKING DIAGRAM/

PIN ASSIGNMENT

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25°C

State

Drain

T = 85°C

1.5

t ≤ 10 s T = 25°C

2.5

TR3

Power Dissipation

(Note 1)

Steady T = 25°C

State

0.73

SOT−23

CASE 318

STYLE 21

Continuous Drain

Current (Note 2)

Steady T = 25°C

1.5

1.1

Gate

State

Source

T = 85°C

Power Dissipation

(Note 2)

T = 25°C

0.42

TR3 = Specific Device Code

= Date Code

Pulsed Drain Current

t = 10 ms

6.0

ORDERING INFORMATION

ESD Capability (Note 3)

C = 100 pF,

ESD

125

RS = 1500 W

†

Device

Package

Shipping

Operating Junction and Storage Temperature

T ,

−55 to

150

°C

NTR4503NT1

SOT−23

3000/Tape & Reel

stg

Source Current (Body Diode)

2.0

SOT−23

(Pb−Free)

NTR4503NT1G

3000/Tape & Reel

10000/Tape & Reel

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

SOT−23

(Pb−Free)

NTR4503NT3G

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

170

100

300

Unit

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t < 10 s (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. Surface−mounted on FR4 board using 1 in sq pad size.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

3. ESD Rating Information: HBM Class 0.

http://www.twtysemi.com

sales@twtysemi.com

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与NTR4503N相关器件

型号	品牌	获取价格	描述	数据表
NTR4503NT1	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
NTR4503NT1	ONSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4503NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4503NT1G	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
NTR4503NT1G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
NTR4503NT3G	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
NTR4503NT3G	ONSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4518NT1G	ONSEMI	获取价格	TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
NTR4D1202CTRF	NICHICON	获取价格	Fixed Resistor, Thin Film, 0.0625W, 12000ohm, 25V, 0.5% +/-Tol, 25ppm/Cel, Surface Mount,
NTR4D1202DTRF	NICHICON	获取价格	Fixed Resistor, Thin Film, 0.0625W, 12000ohm, 25V, 0.5% +/-Tol, 50ppm/Cel, Surface Mount,

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