Datasheet > NTR4501NT3

NTR4501NT3

更新时间： 2024-09-26 12:03:47

品牌	Logo	应用领域
TYSEMI		晶体转换器晶体管开关脉冲光电二极管
页数	文件大小	规格书
2页	164K
描述
Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 DC-DC Conversion

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NTR4501NT3 数据手册

Product specification

NTR4501N

Power MOSFET

TYP

I MAX

(Note 1)

(BR)DSS

DS(on)

20 V, 3.2 A, Single N−Channel, SOT−23

70 mW @ 4.5 V

85 mW @ 2.5 V

3.6 A

20 V

3.1 A

Features

• Leading Planar Technology for Low Gate Charge / Fast Switching

• 2.5 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint

• Pb−Free Package is Available

N−Channel

Applications

• Load/Power Switch for Portables

• Load/Power Switch for Computing

• DC−DC Conversion

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

MARKING DIAGRAM/

PIN ASSIGNMENT

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

±12

3.2

Drain

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25°C

State

SOT−23

CASE 318

STYLE 21

TR1

T = 85°C

2.4

Steady State Power

Dissipation (Note 1)

Steady State

1.25

Gate

Source

Pulsed Drain Current

t = 10 ms

10.0

TR1 = Specific Device Code

= Date Code

Operating Junction and Storage Temperature

T ,

stg

−55 to

150

°C

Continuous Source Current (Body Diode)

1.6

ORDERING INFORMATION

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Device

Package

Shipping†

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

NTR4501NT1

SOT−23

3000 / Tape & Reel

NTR4501NT1G

SOT−23

(Pb−Free)

NTR4501NT3

SOT−23

10000 / Tape & Reel

THERMAL RESISTANCE RATINGS

Parameter

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Symbol

Max

100

300

Unit

NTR4501NT3G

SOT−23

(Pb−Free)

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size.

http://www.twtysemi.com

sales@twtysemi.com

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与NTR4501NT3相关器件

型号	品牌	获取价格	描述	数据表
NTR4501NT3G	TYSEMI	获取价格	Power MOSFET 20 V, 3.2 A, Single N-Channel, SOT-23 DC-DC Conversion
NTR4501NT3G	ONSEMI	获取价格	Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
NTR4502P	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502P	TYSEMI	获取价格	Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Battery Charging Circuits
NTR4502PT1	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502PT1G	TYSEMI	获取价格	Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Battery Charging Circuits
NTR4502PT1G	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502PT1G	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
NTR4502PT3	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502PT3G	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23

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