Datasheet > NTR4502P

NTR4502P

更新时间： 2024-11-17 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	131K
描述
Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23

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NTR4502P 数据手册

NTR4502P

Power MOSFET

−30 V, −1.95 A, Single, P−Channel,

SOT−23

Features

http://onsemi.com

• Leading Planar Technology for Low Gate Charge / Fast Switching

TYP

Max (Note 1)

−1.95 A

(BR)DSS

DS(on)

• Low R

for Low Conduction Losses

DS(ON)

155 mW @ −10 V

240 mW @ −4.5 V

• SOT−23 Surface Mount for Small Footprint (3 X 3 mm)

• Pb−Free Packages are Available

−30 V

Applications

• DC to DC Conversion

P−Channel MOSFET

• Load/Power Switch for Portables and Computing

• Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.

• Battery Charging Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

−30

DSS

Gate−to−Source Voltage

MARKING DIAGRAM/

PIN ASSIGNMENT

Drain Current (Note 1)

t < 10 s T = 25°C

−1.95

−1.56

1.25

Drain

T = 70°C

Power Dissipation

(Note 1)

t < 10 s

TR2 M G

SOT−23

CASE 318

STYLE 21

Continuous Drain Current Steady T = 25°C

−1.13

−0.90

0.4

Gate

(Note 1)

State

Steady State

t = 10 ms

T = 70°C

Source

Power Dissipation

(Note 1)

TR2 = Device Code

= Date Code*

= Pb−Free Package

Pulsed Drain Current

−6.8

(Note: Microdot may be in either location)

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Source Current (Body Diode)

−1.25

Lead Temperature for Soldering Purposes

(1/8 in from case for 10 s)

260

°C

ORDERING INFORMATION

Device

Package

Shipping†

THERMAL RESISTANCE RATINGS

Parameter

NTR4502PT1

SOT−23

3000 / Tape & Reel

Symbol

Max

300

100

Unit

NTR4502PT1G

SOT−23

(Pb−Free)

3000 / Tape & Reel

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t = 10 s (Note 1)

°C/W

NTR4502PT3

SOT−23

10000 / Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq. pad size

NTR4502PT3G

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Cu area = 1.127 in sq. [1 oz] including traces).

Publication Order Number:

April, 2009 − Rev. 4

NTR4502P/D

12 3 4 5

中文翻译

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与NTR4502P相关器件

型号	品牌	获取价格	描述	数据表
NTR4502PT1	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502PT1G	TYSEMI	获取价格	Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Battery Charging Circuits
NTR4502PT1G	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502PT1G	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
NTR4502PT3	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502PT3G	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4503N	ONSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4503N	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
NTR4503NT1	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
NTR4503NT1	ONSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23

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