Datasheet > NTR4502PT1G

NTR4502PT1G

更新时间： 2024-11-19 12:30:59

品牌	Logo	应用领域
TYSEMI		晶体电池晶体管开关光电二极管 PC
页数	文件大小	规格书
2页	188K
描述
Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Battery Charging Circuits

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTR4502PT1G 数据手册

Product specification

NTR4502P, NVTR4502P

Power MOSFET

TYP

Max (Note 1)

−1.95 A

(BR)DSS

DS(on)

155 mW @ −10 V

240 mW @ −4.5 V

−30 V, −1.95 A, Single, P−Channel,

SOT−23

−30 V

P−Channel MOSFET

Features

• Leading Planar Technology for Low Gate Charge / Fast Switching

• Low R

for Low Conduction Losses

DS(ON)

• SOT−23 Surface Mount for Small Footprint (3 X 3 mm)

• AEC Q101 Qualified − NVTR4502P

• These Devices are Pb−Free and are RoHS Compliant

Applications

• DC to DC Conversion

• Load/Power Switch for Portables and Computing

• Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.

• Battery Charging Circuits

MARKING DIAGRAM/

PIN ASSIGNMENT

Drain

TR2 M G

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

SOT−23

CASE 318

STYLE 21

Parameter

Drain−to−Source Voltage

Symbol Value Unit

Gate

Source

DSS

−30

Gate−to−Source Voltage

TR2 = Device Code

= Date Code*

Drain Current (Note 1)

t < 10 s T = 25°C

−1.95

−1.56

1.25

= Pb−Free Package

T = 70°C

(Note: Microdot may be in either location)

Power Dissipation

(Note 1)

t < 10 s

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Continuous Drain Current Steady T = 25°C

−1.13

−0.90

0.4

(Note 1)

State

Steady State

t = 10 ms

ORDERING INFORMATION

T = 70°C

Power Dissipation

(Note 1)

Device

Package

Shipping†

NTR4502PT1G

SOT−23

3000 / Tape & Reel

Pulsed Drain Current

−6.8

(Pb−Free)

Operating Junction and Storage Temperature

T ,

STG

−55 to

°C

NVTR4502PT1G

SOT−23

(Pb−Free)

3000 / Tape & Reel

150

Source Current (Body Diode)

−1.25

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Lead Temperature for Soldering Purposes

(1/8 in from case for 10 s)

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

300

100

Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t = 10 s (Note 1)

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq. pad size

(Cu area = 1.127 in sq. [1 oz] including traces).

http://www.twtysemi.com

sales@twtysemi.com

1 of 2

中文翻译

下载PDF

与NTR4502PT1G相关器件

型号	品牌	获取价格	描述	数据表
NTR4502PT3	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502PT3G	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4503N	ONSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4503N	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
NTR4503NT1	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
NTR4503NT1	ONSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4503NT1G	ONSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4503NT1G	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
NTR4503NT1G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
NTR4503NT3G	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available

与NTR4502PT1G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

NTR4502PT1G

NTR4502PT1G 数据手册

与NTR4502PT1G相关器件

与NTR4502PT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTR4502PT1G

NTR4502PT1G 数据手册

与NTR4502PT1G相关器件

与NTR4502PT1G相关文章

您还可以找

您在本页遇到什么问题？