Datasheet > NTR4502P

NTR4502P

更新时间： 2024-02-01 19:19:38

品牌	Logo	应用领域
TYSEMI		电池
页数	文件大小	规格书
2页	188K
描述
Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Battery Charging Circuits

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NTR4502P 数据手册

Product specification

NTR4502P, NVTR4502P

Power MOSFET

TYP

Max (Note 1)

−1.95 A

(BR)DSS

DS(on)

155 mW @ −10 V

240 mW @ −4.5 V

−30 V, −1.95 A, Single, P−Channel,

SOT−23

−30 V

P−Channel MOSFET

Features

• Leading Planar Technology for Low Gate Charge / Fast Switching

• Low R

for Low Conduction Losses

DS(ON)

• SOT−23 Surface Mount for Small Footprint (3 X 3 mm)

• AEC Q101 Qualified − NVTR4502P

• These Devices are Pb−Free and are RoHS Compliant

Applications

• DC to DC Conversion

• Load/Power Switch for Portables and Computing

• Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.

• Battery Charging Circuits

MARKING DIAGRAM/

PIN ASSIGNMENT

Drain

TR2 M G

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

SOT−23

CASE 318

STYLE 21

Parameter

Drain−to−Source Voltage

Symbol Value Unit

Gate

Source

DSS

−30

Gate−to−Source Voltage

TR2 = Device Code

= Date Code*

Drain Current (Note 1)

t < 10 s T = 25°C

−1.95

−1.56

1.25

= Pb−Free Package

T = 70°C

(Note: Microdot may be in either location)

Power Dissipation

(Note 1)

t < 10 s

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Continuous Drain Current Steady T = 25°C

−1.13

−0.90

0.4

(Note 1)

State

Steady State

t = 10 ms

ORDERING INFORMATION

T = 70°C

Power Dissipation

(Note 1)

Device

Package

Shipping†

NTR4502PT1G

SOT−23

3000 / Tape & Reel

Pulsed Drain Current

−6.8

(Pb−Free)

Operating Junction and Storage Temperature

T ,

STG

−55 to

°C

NVTR4502PT1G

SOT−23

(Pb−Free)

3000 / Tape & Reel

150

Source Current (Body Diode)

−1.25

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Lead Temperature for Soldering Purposes

(1/8 in from case for 10 s)

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

300

100

Unit

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – t = 10 s (Note 1)

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq. pad size

(Cu area = 1.127 in sq. [1 oz] including traces).

http://www.twtysemi.com

sales@twtysemi.com

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与NTR4502P相关器件

型号	品牌	获取价格	描述	数据表
NTR4502PT1	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502PT1G	TYSEMI	获取价格	Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Battery Charging Circuits
NTR4502PT1G	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502PT1G	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
NTR4502PT3	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502PT3G	ONSEMI	获取价格	Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4503N	ONSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4503N	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
NTR4503NT1	TYSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Pb-Free Package is Available
NTR4503NT1	ONSEMI	获取价格	Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23

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