Datasheet > NTR4501NT1G

NTR4501NT1G

更新时间： 2024-09-27 18:09:39

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1521K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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NTR4501NT1G 数据手册

SMD Type

MOSFET

N-Channel MOSFET

NTR4501NT1G

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● VDS (V) = 20V

● ID = 3.2 A (VGS = 4.5V)

● R^DS(ON)＜ 70mΩ (VGS = 4.5V)

● R^DS(ON)＜ 85mΩ (VGS = 2.5V)

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

● Leading Planar Technology for Low Gate Charge / Fast Switching

● 2.5 V Rated for Low Voltage Gate Drive

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

±12

3.2

TA=25℃

TA=85℃

Continuous Drain Current

(Note.1)

2.4

Pulsed Drain Current @ t

Power Dissipation

=10us

(Note.1)

1.25

100

300

260

150

Thermal Resistance.Junction- to-Ambient

(Note.1)

(Note.2)

thJA

℃/W

Lead Temperature for Soldering Purposes (Note.3)

Junction Temperature

℃

Storage Temperature Range

stg

-55 to 150

Note.1: Surface−mounted on FR4 board using 1 in sq pad size.

Note.2: Surface−mounted on FR4 board using the minimum recommended pad size.

Note.3: 1/8” from case for 10 s.

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