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NTMFS6B03N PDF预览

NTMFS6B03N

更新时间： 2024-09-15 01:11:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 82K
描述
Single N-Channel Power MOSFET

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NTMFS6B03N 数据手册

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NTMFS6B03N  
Power MOSFET  
100 V, 4.8 mW, 132 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
100 V  
4.8 mW @ 10 V  
132 A  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
20  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
GS  
V
D (5)  
Continuous Drain  
Current R  
(Notes 1, 2, 3)  
T
= 25°C  
I
132  
A
C
D
q
JC  
T
C
= 100°C  
83  
Steady  
State  
Power Dissipation  
T
C
= 25°C  
P
165  
65  
W
A
D
G (4)  
R
(Notes 1, 2)  
q
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
19  
S (1,2,3)  
N−CHANNEL MOSFET  
q
JA  
T = 100°C  
A
12  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.4  
1.4  
470  
W
D
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
MARKING  
DIAGRAM  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 150  
°C  
J
stg  
1
S
S
S
G
D
D
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
6B03N  
AYWZZ  
Source Current (Body Diode)  
I
S
160  
180  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 60 A)  
D
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
A
Y
= Assembly Location  
= Year  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
W
ZZ  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Junction−to−Case − Steady State  
R
0.76  
38  
°C/W  
q
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
February, 2015 − Rev. 1  
NTMFS6B03N/D  
 
123456

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