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NTMFS5H414NLT1G

更新时间： 2024-09-15 11:14:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 219K
描述
Single N Channel Power MOSFET 40V, 210A, 1.4mΩ

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NTMFS5H414NLT1G 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：not_compliantFactory Lead Time：1 week
风险等级：1.54JESD-609代码：e3
峰值回流温度（摄氏度）：NOT SPECIFIED端子面层：Tin (Sn)
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NTMFS5H414NLT1G 数据手册

 浏览型号NTMFS5H414NLT1G的Datasheet PDF文件第2页浏览型号NTMFS5H414NLT1G的Datasheet PDF文件第3页浏览型号NTMFS5H414NLT1G的Datasheet PDF文件第4页浏览型号NTMFS5H414NLT1G的Datasheet PDF文件第5页浏览型号NTMFS5H414NLT1G的Datasheet PDF文件第6页浏览型号NTMFS5H414NLT1G的Datasheet PDF文件第7页 
NTMFS5H414NL  
MOSFET – Single,  
N-Channel  
40 V, 1.4 mW, 210 A  
Features  
• Small Footprint (5x6 mm) for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• These Devices are Pb−Free and are RoHS Compliant  
1.4 mW @ 10 V  
2.0 mW @ 4.5 V  
40 V  
210 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
D (5)  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
210  
130  
110  
45  
A
C
D
q
JC  
T
C
(Notes 1, 3)  
Steady  
State  
G (4)  
Power Dissipation  
T
C
P
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
35  
q
JA  
T = 100°C  
A
22  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.1  
1.3  
900  
W
D
MARKING  
DIAGRAM  
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
D
A
p
1
S
S
S
G
D
D
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
5H414L  
AYWZZ  
+ 150  
Source Current (Body Diode)  
I
S
120  
290  
A
D
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 44 A)  
L(pk)  
5H414L = Specific Device Code  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
A
Y
= Assembly Location  
= Year  
W
ZZ  
= Work Week  
= Lot Traceability  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Parameter  
Symbol  
Value  
1.1  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
39  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
May, 2019 − Rev. 0  
NTMFS5H414NL/D  
 
1234567

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