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NTMFS5H600NLT3G PDF预览

NTMFS5H600NLT3G

更新时间： 2024-11-03 01:10:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 86K
描述
Power MOSFET

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NTMFS5H600NLT3G 数据手册

 浏览型号NTMFS5H600NLT3G的Datasheet PDF文件第2页浏览型号NTMFS5H600NLT3G的Datasheet PDF文件第3页浏览型号NTMFS5H600NLT3G的Datasheet PDF文件第4页浏览型号NTMFS5H600NLT3G的Datasheet PDF文件第5页浏览型号NTMFS5H600NLT3G的Datasheet PDF文件第6页 
NTMFS5H600NL  
Power MOSFET  
60 V, 1.3 mW, 250 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
1.3 mW @ 10 V  
1.7 mW @ 4.5 V  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
60 V  
250 A  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
(Notes 1, 3)  
T
= 25°C  
= 100°C  
= 25°C  
I
250  
160  
160  
63  
A
C
D
D (5)  
q
JC  
T
C
Steady  
State  
Power Dissipation  
T
C
P
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
G (4)  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
35  
q
JA  
T = 100°C  
A
22  
(Notes 1, 2, 3)  
S (1,2,3)  
N−CHANNEL MOSFET  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.3  
1.3  
900  
W
D
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
MARKING  
DIAGRAM  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 150  
°C  
J
stg  
D
1
Source Current (Body Diode)  
I
170  
338  
A
S
S
S
G
D
D
S
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
5H600L  
AYWZZ  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 26 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
D
L
5H600L = Specific Device Code  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State  
R
0.80  
38  
°C/W  
q
q
JC  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
Junction−to−Ambient − Steady State (Note 2)  
R
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
package dimensions section on page 5 of this data sheet.  
2
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
September, 2016 − Rev. 0  
NTMFS5H600NL/D  
 
123456

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