Datasheet > NTMFS5H615NLT1G

NTMFS5H615NLT1G

更新时间： 2024-09-15 11:15:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	220K
描述
单 N 沟道，功率 MOSFET，60V，200A，1.8mΩ

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NTMFS5H615NLT1G 数据手册

MOSFET – Power, Single,

N-Channel

60 V, 1.8 mW, 185 A

NTMFS5H615NL

Features

• Small Footprint (5x6 mm) for Compact Design

www.onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(ON)

1.8 mW @ 10 V

2.5 mW @ 4.5 V

60 V

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

185 A

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

D (5)

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

185

117

139

(Notes 1, 3)

Steady

State

Power Dissipation

G (4)

(Note 1)

= 100°C

S (1,2,3)

N−CHANNEL MOSFET

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.2

1.3

900

(Notes 1, 2)

MARKING

DIAGRAM

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+150

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

5H615L

AYWZZ

Source Current (Body Diode)

116

419

Single Pulse Drain−to−Source Avalanche

Energy (I

= 16 A)

L(pk)

5H615L = Specific Device Code

Lead Temperature for Soldering Purposes

260

°C

= Assembly Location

= Year

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Work Week

= Lot Traceability

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.9

Unit

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

June, 2021 − Rev. 1

NTMFS5H615NL/D

12 3 4 5 6 7

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