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NTMFS5H425NLT1G PDF预览

NTMFS5H425NLT1G

更新时间： 2024-11-03 11:13:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 216K
描述
Single N-Channel Power MOSFET 40V, 120A, 2.8mΩ

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NTMFS5H425NLT1G 数据手册

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NTMFS5H425NL  
MOSFET – Power, Single,  
N-Channel  
40 V, 2.8 mW, 118 A  
Features  
• Small Footprint (5x6 mm) for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
2.8 mW @ 10 V  
4.3 mW @ 4.5 V  
40 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
118 A  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
D (5)  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
118  
75  
A
C
D
q
JC  
T
C
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
69  
W
A
G (4)  
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
28  
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
25  
q
JA  
T = 100°C  
A
16  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.0  
1.2  
650  
W
D
R
(Notes 1, 2)  
q
JA  
MARKING  
DIAGRAM  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D
1
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
S
S
S
G
D
D
+ 150  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
5H425L  
AYWZZ  
Source Current (Body Diode)  
I
S
58  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
289  
mJ  
D
Energy (I  
= 9.7 A)  
L(pk)  
5H425L = Specific Device Code  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
A
Y
= Assembly Location  
= Year  
(1/8″ from case for 10 s)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
W
ZZ  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
1.8  
Unit  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
41  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
May, 2019 − Rev. 1  
NTMFS5H425NL/D  
 
1234567

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