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NTMFS5C670NLT1G PDF预览

NTMFS5C670NLT1G

更新时间： 2024-09-10 00:59:15
品牌 Logo 应用领域
安森美 - ONSEMI PC
页数 文件大小 规格书
6页 85K
描述
Single N-Channel Field Effect Transistor

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中文翻译

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NTMFS5C670NLT1G 技术参数

是否无铅：不含铅生命周期：Active
包装说明：,Reach Compliance Code：not_compliant
Factory Lead Time：4 weeks风险等级：1.5
Samacsys Confidence：4Samacsys Status：Released
Samacsys PartID：2534090Samacsys Pin Count：5
Samacsys Part Category：MOSFET (N-Channel)Samacsys Package Category：Other
Samacsys Footprint Name：DFN5 5x6, 1.27P (SO?8FL) CASE 488AA ISSUE NSamacsys Released Date：2019-06-06 11:59:41
Is Samacsys：NJESD-609代码：e3
湿度敏感等级：1端子面层：Tin (Sn)
Base Number Matches：1

NTMFS5C670NLT1G 数据手册

 浏览型号NTMFS5C670NLT1G的Datasheet PDF文件第2页浏览型号NTMFS5C670NLT1G的Datasheet PDF文件第3页浏览型号NTMFS5C670NLT1G的Datasheet PDF文件第4页浏览型号NTMFS5C670NLT1G的Datasheet PDF文件第5页浏览型号NTMFS5C670NLT1G的Datasheet PDF文件第6页 
NTMFS5C670NL  
Power MOSFET  
60 V, 6.1 mW, 71 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
6.1 mW @ 10 V  
8.8 mW @ 4.5 V  
60 V  
71 A  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
D (5)  
Continuous Drain  
Current R  
(Notes 1, 3)  
T
= 25°C  
= 100°C  
= 25°C  
I
71  
A
C
D
q
JC  
T
C
50  
Steady  
State  
Power Dissipation  
T
C
P
61  
W
A
D
R
(Note 1)  
q
JC  
G (4)  
T
C
= 100°C  
31  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
17  
q
JA  
S (1,2,3)  
N−CHANNEL MOSFET  
T = 100°C  
A
12  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.6  
1.8  
440  
W
D
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
MARKING  
DIAGRAM  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
D
1
S
S
S
G
D
D
Source Current (Body Diode)  
I
68  
A
S
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
5C670L  
AYWZZ  
Single Pulse Drain−to−Source Avalanche  
E
AS  
166  
mJ  
Energy (I  
= 3.6 A)  
L(pk)  
D
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
5C670L = Specific Device Code  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
2.4  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
q
JC  
JA  
R
41  
q
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
January, 2016 − Rev. 1  
NTMFS5C670NL/D  
 
123456

中文翻译

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NTMFS5C670NLT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTMFS5C670NLT3G ONSEMI

完全替代

 Single N-Channel Field Effect Transistor
NVMFS5C670NLT1G ONSEMI

完全替代

 Power MOSFET

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