5秒后页面跳转
捷配首页

Datasheet > NTMFS5C682NLT3G
NTMFS5C682NLT3G PDF预览

NTMFS5C682NLT3G

更新时间： 2024-11-03 01:11:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 93K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

NTMFS5C682NLT3G 数据手册

 浏览型号NTMFS5C682NLT3G的Datasheet PDF文件第2页浏览型号NTMFS5C682NLT3G的Datasheet PDF文件第3页浏览型号NTMFS5C682NLT3G的Datasheet PDF文件第4页浏览型号NTMFS5C682NLT3G的Datasheet PDF文件第5页浏览型号NTMFS5C682NLT3G的Datasheet PDF文件第6页 
NTMFS5C682NL  
Power MOSFET  
60 V, 21 mW, 25 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
21 mW @ 10 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
60 V  
25 A  
J
31.5 mW @ 4.5 V  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
D (5)  
Continuous Drain  
Current R  
(Notes 1, 3)  
T
= 25°C  
I
25  
A
C
D
q
JC  
T
C
= 100°C  
18  
Steady  
State  
Power Dissipation  
T
C
= 25°C  
P
28  
14  
W
A
D
G (4)  
R
(Note 1)  
q
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
8.8  
S (1,2,3)  
N−CHANNEL MOSFET  
q
JA  
T = 100°C  
A
6.2  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.5  
1.7  
130  
W
D
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
MARKING  
DIAGRAM  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
1
S
S
S
G
D
D
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
5C682L  
AYWZZ  
Source Current (Body Diode)  
I
S
31  
43  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 1.1 A)  
L(pk)  
D
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
5C682L = Specific Device Code  
A
Y
= Assembly Location  
= Year  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
W
ZZ  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Junction−to−Case − Steady State  
R
5.3  
43  
°C/W  
q
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
April, 2017 − Rev. 0  
NTMFS5C682NL/D  
 
123456

中文翻译

下载PDF

与NTMFS5C682NLT3G相关器件

型号 品牌 获取价格 描述 数据表
NTMFS5H400NL ONSEMI

获取价格

 		Power MOSFET
NTMFS5H400NLT1G ONSEMI

获取价格

 		Power MOSFET
NTMFS5H400NLT3G ONSEMI

获取价格

 		Power MOSFET
NTMFS5H409NL ONSEMI

获取价格

 		Power MOSFET
NTMFS5H409NLT1G ONSEMI

获取价格

 		Power MOSFET
NTMFS5H409NLT3G ONSEMI

获取价格

 		Power MOSFET
NTMFS5H414NLT1G ONSEMI

获取价格

 		Single N Channel Power MOSFET 40V, 210A, 1.4m
NTMFS5H419NLT1G ONSEMI

获取价格

 		单 N 沟道，功率 MOSFET，40V，150A，2.1mΩ
NTMFS5H425NLT1G ONSEMI

获取价格

 		Single N-Channel Power MOSFET 40V, 120A, 2.8m
NTMFS5H431NLT1G ONSEMI

获取价格

 		Single N-Channel Power MOSFET 40V, 110A, 3.3m

与NTMFS5C682NLT3G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证