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NTMFS5H400NL PDF预览

NTMFS5H400NL

更新时间： 2024-11-03 01:10:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 85K
描述
Power MOSFET

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NTMFS5H400NL 数据手册

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NTMFS5H400NL  
Power MOSFET  
40 V, 0.80 mW, 330 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
0.80 mW @ 10 V  
1.1 mW @ 4.5 V  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
40 V  
330 A  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
(Notes 1, 3)  
T
= 25°C  
= 100°C  
= 25°C  
I
330  
210  
160  
66  
A
C
D
D (5)  
q
JC  
T
C
Steady  
State  
Power Dissipation  
T
C
P
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
G (4)  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
46  
q
JA  
T = 100°C  
A
29  
(Notes 1, 2, 3)  
S (1,2,3)  
N−CHANNEL MOSFET  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.3  
1.3  
900  
W
D
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
MARKING  
DIAGRAM  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 150  
°C  
J
stg  
D
1
Source Current (Body Diode)  
I
180  
360  
A
S
S
S
G
D
D
S
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
5H400L  
AYWZZ  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 49 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
D
L
5H400L = Specific Device Code  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State  
R
0.76  
38  
°C/W  
q
q
JC  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
Junction−to−Ambient − Steady State (Note 2)  
R
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
page 5 of this data sheet.  
2
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
March, 2016 − Rev. 0  
NTMFS5H400NL/D  
 
123456

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