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NTMFS5C677NLT1G PDF预览

NTMFS5C677NLT1G

更新时间： 2024-09-15 11:14:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 213K
描述
功率 MOSFET，单 N 沟道，60 V，36 A，15.0 mΩ

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NTMFS5C677NLT1G 数据手册

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NTMFS5C677NL  
Power MOSFET  
60 V, 15.0 mW, 36 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• These Devices are Pb−Free and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
V
R
MAX  
I MAX  
D
J
(BR)DSS  
DS(ON)  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
15.0 mW @ 10 V  
21.5 mW @ 4.5 V  
60 V  
36 A  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
36  
A
C
D
q
JC  
D (5)  
T
C
25  
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
37  
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
18  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
11  
G (4)  
q
JA  
T = 100°C  
A
7.8  
3.5  
1.8  
166  
(Notes 1, 2, 3)  
Steady  
State  
S (1,2,3)  
N−CHANNEL MOSFET  
Power Dissipation  
T = 25°C  
A
P
W
D
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
MARKING  
DIAGRAM  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
D
Source Current (Body Diode)  
I
31  
65  
A
S
1
S
S
S
G
D
D
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
5C677L  
AYWZZ  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
Energy (I  
= 2.87 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
D
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
5C677L = Specific Device Code  
A
= Assembly Location  
= Year  
Y
W
ZZ  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
4.1  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
ORDERING INFORMATION  
R
43  
q
JA  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
October, 2018 − Rev. 0  
NTMFS5C677NL/D  
 
1234567

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