NTMFS5C673NL
Power MOSFET
60 V, 9.2 mW, 50 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
9.2 mW @ 10 V
13 mW @ 4.5 V
60 V
50 A
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
D (5)
Continuous Drain
Current R
(Notes 1, 3)
T
= 25°C
= 100°C
= 25°C
I
50
A
C
D
q
JC
T
C
35
Steady
State
Power Dissipation
T
C
P
46
W
A
D
R
(Note 1)
q
JC
G (4)
T
C
= 100°C
23
Continuous Drain
Current R
T = 25°C
A
I
D
14
q
JA
S (1,2,3)
N−CHANNEL MOSFET
T = 100°C
A
10
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.6
1.8
290
W
D
R
(Notes 1 & 2)
q
JA
T = 100°C
A
MARKING
DIAGRAM
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
+175
°C
D
J
stg
1
S
S
S
G
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C673L
AYWZZ
Source Current (Body Diode)
I
S
52
81
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 2 A)
L(pk)
D
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
5C673L = Specific Device Code
A
Y
= Assembly Location
= Year
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
W
ZZ
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.2
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
q
JC
JA
R
42
q
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
October, 2015 − Rev. 0
NTMFS5C673NL/D