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NTMFS5C673NT1G

更新时间： 2024-09-15 11:09:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 216K
描述
Single N−Channel Power MOSFET 60V, 50A, 10.7mΩ

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NTMFS5C673NT1G 数据手册

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MOSFET – Power, Single,  
N-Channel  
60 V, 10.7 mW, 50 A  
NTMFS5C673N  
Features  
www.onsemi.com  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• These Devices are Pb−Free and are RoHS Compliant  
60 V  
10.7 mW @ 10 V  
50 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
D (5)  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
50  
A
C
D
G (4)  
q
JC  
T
C
35  
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
46  
W
A
D
S (1,2,3)  
N−CHANNEL MOSFET  
R
(Note 1)  
q
JC  
T
C
= 100°C  
23  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
14  
q
JA  
MARKING  
DIAGRAM  
T = 100°C  
A
10  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.6  
1.8  
290  
W
D
D
R
(Notes 1 & 2)  
q
JA  
1
T = 100°C  
A
S
S
S
G
D
D
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
5C673N  
AYWZZ  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
D
Source Current (Body Diode)  
I
52  
81  
A
S
5C673N = Specific Device Code  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
A
= Assembly Location  
= Year  
Energy (I  
= 2 A)  
L(pk)  
Y
W
ZZ  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
3.2  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
42  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
December, 2019 − Rev. 0  
NTMFS5C673N/D  
 
1234567

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