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NVMFS5C670NLT1G

更新时间： 2024-02-20 11:01:53
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安森美 - ONSEMI /
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6页 127K
描述
Power MOSFET

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NVMFS5C670NLT1G 数据手册

 浏览型号NVMFS5C670NLT1G的Datasheet PDF文件第2页浏览型号NVMFS5C670NLT1G的Datasheet PDF文件第3页浏览型号NVMFS5C670NLT1G的Datasheet PDF文件第4页浏览型号NVMFS5C670NLT1G的Datasheet PDF文件第5页浏览型号NVMFS5C670NLT1G的Datasheet PDF文件第6页 
NVMFS5C670NL  
Power MOSFET  
60 V, 6.1 mW, 71 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• NVMFS5C670NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
6.1 mW @ 10 V  
8.8 mW @ 4.5 V  
60 V  
71 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
D (5,6)  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
I
71  
A
C
D
q
JC  
T
C
= 100°C  
50  
(Notes 1, 3)  
Steady  
State  
G (4)  
Power Dissipation  
T
C
= 25°C  
P
61  
31  
17  
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
q
JA  
T = 100°C  
A
12  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.6  
1.8  
440  
W
D
MARKING  
DIAGRAM  
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
1
S
S
S
G
D
D
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
XXXXXX  
AYWZZ  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
+ 175  
Source Current (Body Diode)  
I
S
68  
A
D
Single Pulse Drain−to−Source Avalanche  
E
AS  
166  
mJ  
Energy (I  
= 3.6 A)  
L(pk)  
XXXXXX = 5C670L  
XXXXXX = (NVMFS5C670NL) or  
XXXXXX = 670LWF  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
XXXXXX = (NVMFS5C670NLWF)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
A
= Assembly Location  
= Year  
Y
W
ZZ  
= Work Week  
= Lot Traceability  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State  
R
2.4  
41  
°C/W  
q
JC  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Junction−to−Ambient − Steady State (Note 2)  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
February, 2017 − Rev. 2  
NVMFS5C670NL/D  
 
123456

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NVMFS5C670NLT1G 替代型号

型号 品牌 替代类型 描述 数据表
NTMFS5C670NLT3G ONSEMI

完全替代

 Single N-Channel Field Effect Transistor
NTMFS5C670NLT1G ONSEMI

完全替代

 Single N-Channel Field Effect Transistor
NVMFS5C670NLWFAFT1G ONSEMI

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