NVMFS5C670NL
Power MOSFET
60 V, 6.1 mW, 71 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• NVMFS5C670NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
6.1 mW @ 10 V
8.8 mW @ 4.5 V
60 V
71 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
D (5,6)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
I
71
A
C
D
q
JC
T
C
= 100°C
50
(Notes 1, 3)
Steady
State
G (4)
Power Dissipation
T
C
= 25°C
P
61
31
17
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
S (1,2,3)
N−CHANNEL MOSFET
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
12
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.6
1.8
440
W
D
MARKING
DIAGRAM
R
(Notes 1 & 2)
q
JA
T = 100°C
A
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
1
S
S
S
G
D
D
Operating Junction and Storage Temperature
T , T
−55 to
°C
J
stg
XXXXXX
AYWZZ
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
+ 175
Source Current (Body Diode)
I
S
68
A
D
Single Pulse Drain−to−Source Avalanche
E
AS
166
mJ
Energy (I
= 3.6 A)
L(pk)
XXXXXX = 5C670L
XXXXXX = (NVMFS5C670NL) or
XXXXXX = 670LWF
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
XXXXXX = (NVMFS5C670NLWF)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
= Assembly Location
= Year
Y
W
ZZ
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
R
2.4
41
°C/W
q
JC
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
February, 2017 − Rev. 2
NVMFS5C670NL/D