Datasheet > NVMFS5H600NLWFT1G

NVMFS5H600NLWFT1G

更新时间： 2024-09-10 11:11:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	222K
描述
单 N 沟道，功率 MOSFET，60V，250A，1.3mΩ

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NVMFS5H600NLWFT1G 数据手册

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DATA SHEET

www.onsemi.com

MOSFET – Power, Single

N-Channel, DFN5/DFNW5

60 V, 1.3 mW, 250 A

MAX

I MAX

(BR)DSS

DS(ON)

1.3 mW @ 10 V

1.7 mW @ 4.5 V

60 V

250 A

NVMFS5H600NL

D (5)

Features

• Small Footprint (5x6 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

S (1,2,3)

N−CHANNEL MOSFET

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DFN5

CASE 506EZ

DSS

5H600L

AYWZZ

Gate−to−Source Voltage

DFNW5

CASE 507BA

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

250

160

(Notes 1, 3)

Steady

State

5H600L = Specific Device Code

Power Dissipation

= Assembly Location

= Year

= Work Week

= Lot Traceability

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.3

1.3

900

(Notes 1, 2)

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

+ 175

°C

stg

Source Current (Body Diode)

170

338

Single Pulse Drain−to−Source Avalanche

Energy (I

= 26 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.80

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

August, 2022 − Rev. 4

NVMFS5H600NL/D

12 3 4 5 6 7 8

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