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NVMFS5H615NLT1G PDF预览

NVMFS5H615NLT1G

更新时间： 2024-09-09 21:17:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 119K
描述
Power Field-Effect Transistor

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中文翻译

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NVMFS5H615NLT1G 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
风险等级：5.72峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NVMFS5H615NLT1G 数据手册

 浏览型号NVMFS5H615NLT1G的Datasheet PDF文件第2页浏览型号NVMFS5H615NLT1G的Datasheet PDF文件第3页浏览型号NVMFS5H615NLT1G的Datasheet PDF文件第4页浏览型号NVMFS5H615NLT1G的Datasheet PDF文件第5页浏览型号NVMFS5H615NLT1G的Datasheet PDF文件第6页 
NVMFS5H615NL,  
NVMFS5H615NLWF  
Power MOSFET  
60 V, 1.8 mW, 203 A, Single N−Channel  
NVMFS5H615NLWF − Wettable Flank  
Option for Enhanced Optical Inspection  
www.onsemi.com  
Features  
• Small Footprint (5x6 mm) for Compact Design  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• Low R  
to Minimize Conduction Losses  
DS(on)  
1.8 mW @ 10 V  
2.5 mW @ 4.5 V  
60 V  
203 A  
• Low Q and Capacitance to Minimize Driver Losses  
G
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
D (5)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
G (4)  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
203  
143  
167  
83  
A
C
D
S (1,2,3)  
N−CHANNEL MOSFET  
q
JC  
T
C
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
MARKING  
DIAGRAM  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
31  
q
JA  
T = 100°C  
A
22  
D
(Notes 1, 2, 3)  
Steady  
State  
1
S
S
S
G
D
D
Power Dissipation  
T = 25°C  
A
P
3.9  
1.9  
900  
W
D
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
XXXXXX  
AYWZZ  
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
XXXXXX = 5H615L (NVMFS5H615NL) or  
= 615LWF (NVMFS5H615NLWF)  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Source Current (Body Diode)  
I
139  
419  
A
S
A
Y
W
ZZ  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= 16 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
0.9  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
39  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
November, 2018 − Rev. 0  
NVMFS5H615NL/D  
 
123456

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