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NVMFS6B14NLWFT3G PDF预览

NVMFS6B14NLWFT3G

更新时间： 2024-11-03 01:04:11
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安森美 - ONSEMI /
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6页 85K
描述
Power MOSFET

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NVMFS6B14NLWFT3G 数据手册

 浏览型号NVMFS6B14NLWFT3G的Datasheet PDF文件第2页浏览型号NVMFS6B14NLWFT3G的Datasheet PDF文件第3页浏览型号NVMFS6B14NLWFT3G的Datasheet PDF文件第4页浏览型号NVMFS6B14NLWFT3G的Datasheet PDF文件第5页浏览型号NVMFS6B14NLWFT3G的Datasheet PDF文件第6页 
NVMFS6B14NL  
Power MOSFET  
100 V, 13 mW, 55 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• NVMFS6B14NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
13 mW @ 10 V  
19 mW @ 4.5 V  
100 V  
55 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
16  
Unit  
V
D (5,6)  
V
DSS  
Gate−to−Source Voltage  
Continuous Drain Cur-  
V
GS  
V
T
= 25°C  
= 100°C  
= 25°C  
I
D
55  
A
C
rent R  
(Notes 1, 3)  
q
JC  
T
C
39  
Steady  
State  
G (4)  
Power Dissipation R  
(Note 1)  
T
C
P
D
94  
W
A
q
JC  
T
C
= 100°C  
47  
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain Cur-  
rent R (Notes 1, 2, 3)  
T = 25°C  
A
I
D
11  
q
JA  
T = 100°C  
A
8.0  
3.8  
1.9  
140  
Steady  
State  
Power Dissipation R  
(Notes 1 & 2)  
T = 25°C  
A
P
D
W
q
JA  
MARKING  
DIAGRAM  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
A
I
DM  
A
p
D
1
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
S
S
S
G
D
D
XXXXXX  
AYWZZ  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
Source Current (Body Diode)  
I
S
60  
29  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
D
Energy (I  
= 24 A)  
L(pk)  
XXXXXX = 6B14NL  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
(NVMFS6B14NL) or  
6B14LW  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
(NVMFS6B14NLWF)  
= Assembly Location  
= Year  
A
Y
THERMAL RESISTANCE MAXIMUM RATINGS  
W
ZZ  
= Work Week  
= Lot Traceability  
Parameter  
Symbol  
Value  
1.6  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
JA  
R
40  
ORDERING INFORMATION  
q
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
2
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
January, 2016 − Rev. 1  
NVMFS6B14NL/D  
 
123456

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NVMFS6B14NLWFT3G 替代型号

型号 品牌 替代类型 描述 数据表
NVMFS6B14NLWFT1G ONSEMI

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