Datasheet > NVMFS6H800NLWFT1G

NVMFS6H800NLWFT1G

更新时间： 2024-11-06 02:52:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	204K
描述
Power MOSFET Single NâChannel, 80 V, 1.9 m, 224 A

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NVMFS6H800NL

Power MOSFET

Single N−Channel, 80 V, 1.9 mW, 224 A

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• NVMFS6H800NLWF − Wettable Flank Option for Enhanced Optical

Inspection

MAX

I MAX

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

(BR)DSS

DS(ON)

1.9 mW @ 10 V

2.4 mW @ 4.5 V

80 V

224 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

D (5,6)

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

224

158

214

107

(Notes 1, 3)

Steady

State

G (4)

Power Dissipation

(Note 1)

= 100°C

S (1,2,3)

N−CHANNEL MOSFET

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.9

1.9

900

MARKING

DIAGRAM

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

+175

Source Current (Body Diode)

179

601

Single Pulse Drain−to−Source Avalanche

Energy (I

= 16.2 A)

XXXXXX = 6H800L

L(pk)

XXXXXX = (NVMFS6H800NL) or

XXXXXX = 800LWF

XXXXXX = (NVMFS6H800NLWF)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Assembly Location

= Year

= Work Week

= Lot Traceability

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.7

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

April, 2019 − Rev. 2

NVMFS6H800NL/D

12 3 4 5 6 7

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与NVMFS6H800NLWFT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS6H800NT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 203A, 2.1m
NVMFS6H800NWFT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 203A, 2.1m
NVMFS6H801NLT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 2.7 m
NVMFS6H801NLWFT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 2.7 m
NVMFS6H801NT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H801NT3G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H801NWFT1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H801NWFT3G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80 V，157 A，2.8 mΩ
NVMFS6H818NL	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVMFS6H818NLT1G	ONSEMI	获取价格	MOSFET - Power, Single N-Channel

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