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NVMFS6H848NLWFT1G

更新时间： 2024-11-07 11:15:59
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安森美 - ONSEMI /
页数 文件大小 规格书
8页 299K
描述
Power MOSFET 80 V, 59 A, 8.8 mΩ, Single N-Channel, SO8-FL.

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NVMFS6H848NLWFT1G 数据手册

 浏览型号NVMFS6H848NLWFT1G的Datasheet PDF文件第2页浏览型号NVMFS6H848NLWFT1G的Datasheet PDF文件第3页浏览型号NVMFS6H848NLWFT1G的Datasheet PDF文件第4页浏览型号NVMFS6H848NLWFT1G的Datasheet PDF文件第5页浏览型号NVMFS6H848NLWFT1G的Datasheet PDF文件第6页浏览型号NVMFS6H848NLWFT1G的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel  
80 V, 8.8 mW, 59 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
8.8 mW @ 10 V  
11 mW @ 4.5 V  
80 V  
59 A  
NVMFS6H848NL  
D (5,6)  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
G (4)  
G
• NVMFS6H848NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
S (1,2,3)  
N−CHANNEL MOSFET  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
80  
Unit  
V
D
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
S
S
S
G
D
D
V
DSS  
XXXXXX  
AYWZZ  
Gate−to−Source Voltage  
V
GS  
20  
V
1
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
59  
A
C
D
D
q
JC  
T
C
42  
(Notes 1, 3)  
Steady  
State  
1
DFNW5  
(SO−8FL)  
CASE 507BA  
Power Dissipation  
T
C
P
73  
W
A
D
XXXXXX  
AYWZZ  
R
(Note 1)  
q
JC  
T
C
= 100°C  
37  
Continuous Drain  
Current R  
T = 25°C  
I
13  
A
D
q
JA  
T = 100°C  
A
9.0  
3.7  
1.8  
319  
XXXXXX = 6H848L  
(Notes 1, 2, 3)  
Steady  
State  
XXXXXX = (NVMFS6H848NL) or  
XXXXXX = 848LWF  
XXXXXX = (NVMFS6H848NLWF)  
Power Dissipation  
T = 25°C  
A
P
W
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
A
Y
= Assembly Location  
= Year  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
W
ZZ  
= Work Week  
= Lot Traceability  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+ 175  
°C  
J
stg  
Source Current (Body Diode)  
I
S
61  
A
Single Pulse Drain−to−Source Avalanche  
E
267  
mJ  
AS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Energy (I  
= 3.4 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
2.0  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
41  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
March, 2022 − Rev. 1  
NVMFS6H848NL/D  
 
12345678

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